Effects of growth temperature and film thickness on the electrical properties of Ba0.7Sr0.3TiO3 thin films grown on platinized silicon substrates by pulsed laser deposition

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 376-382

  Zhu, X H ^a   Zheng, D N ^a   Zeng, H ^a   Peng, W ^a   Zhu, J G ^b   Yuan, X W ^b   Yong, L P ^a,b   Miao, J ^a   Li, J ^a   Tian, H Y ^a   Xu, X P ^a  

^a INSTITUTE OF PHYSICS   (China)

^b SICHUAN UNIVERSITY   (China)

Author keywords

Dielectric properties; Diffusion; Electrical properties and measurement; Laser ablation

Indexed keywords

DIELECTRIC PROPERTIES; DIFFUSION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; GROWTH KINETICS; LASER ABLATION; PULSED LASER DEPOSITION; SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

CURIE-WEISS TEMPERATURE; ELECTRICAL PROPERTIES AND MEASUREMENT; FILM THICKNESS; GROWTH TEMPERATURES;

BARIUM COMPOUNDS;

EID: 28044436105     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.107     Document Type: Article

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