Uniaxial dielectric anisotropy in Ba0.5Sr0.5TiO3 films studied by evanescent-probe microscopy

Applied Physics Letters

Volumn 78, Issue 24, 2001, Pages 3872-3874

  Wang, Y G ^a   Reeves, M E ^a   Kim, W J ^b   Horwitz, J S ^b   Rachford, F J ^b  

^a GEORGE WASHINGTON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035844426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377628     Document Type: Article

References (22)

1. W. J. Kim, W. Chang, S. B. Qadri, J. M. Pond, S. W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, Appl. Phys. Lett. 76, 1185 (2000).
2. W. Chang, J. S. Horwitz, A. C. Carter, J. M. Pond, S. W. Kirchoefer, C. M. Gilmore, and D. B. Chrisey, Appl. Phys. Lett. 74, 1033 (1999); Wontae Chang, Ph.D. thesis, George Washington University (1999).
3. W. Chang, J. S. Horwitz, A. C. Carter, J. M. Pond, S. W. Kirchoefer, C. M. Gilmore, and D. B. Chrisey, Appl. Phys. Lett. 74, 1033 (1999); Wontae Chang, Ph.D. thesis, George Washington University (1999).
4. S. Zafar, R. E. Jones, P. Chu, B. White, B. Jiang, D. Taylor, P. Zurcher, and S. Gillepsie, Appl. Phys. Lett. 72, 2820 (1998).
5. T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, Appl. Phys. Lett. 75, 2129 (1999).
6. C. M. Carlson, T. V. Rivkin, P. A. Parilla, J. D. Perkins, D. S. Ginley, A. B. Kozyrev, V. N. Oshadchy, and A. S. Pavlov. Appl. Phys. Lett. 76, 1920 (2000).
7. C. Gao and X. D. Xiang, Rev. Sci. Instrum. 69, 3846 (1998); Y. Lu, T. Wei, F. Duewer, Y. Lu, N. B. Ming, P. G. Schultz, and X. D. Xiang, Science 276, 2004 (1997).
8. C. Gao and X. D. Xiang, Rev. Sci. Instrum. 69, 3846 (1998); Y. Lu, T. Wei, F. Duewer, Y. Lu, N. B. Ming, P. G. Schultz, and X. D. Xiang, Science 276, 2004 (1997).
9. Y. G. Wang, M. E. Reeves, and F. S. Rachford, Appl. Phys. Lett. 76, 3295 (2000).
10. Y. G. Wang, M. E. Reeves, W. Chang, J. S. Horwitz, and W. Kim, Mater. Res. Soc. Symp. Proc. 603, 221 (2000).
11. D. E. Steinhauer, C. P. Vlahacos, F. C. Wellstood, S. M. Anlage, C. Canedy, R. Ramesh, A. Stanishevsky, and J. Melngailis, Appl. Phys. Lett. 75, 3180 (1999).
12. Y. Cho, S. Kazuta, and K. Matsuura, Appl. Phys. Lett. 75, 2833 (1999).
13. Y. Xu. Ferroelectric Materials and Their Applications (Elsevier Science. Amsterdam, 1991).
14. W. L. Zhong, Y. G. Wang, and P. L. Zhang, Ferroelectr. Rev. 1, 131 (1998); Y. G. Wang, W. L. Zhong, and P. L. Zhang, Phys. Rev. B 53, 11439 (1996).
15. W. L. Zhong, Y. G. Wang, and P. L. Zhang, Ferroelectr. Rev. 1, 131 (1998); Y. G. Wang, W. L. Zhong, and P. L. Zhang, Phys. Rev. B 53, 11439 (1996).
16. Maxwell 2D and 3D field simulators, Ansoft Inc., Four Station Square Suite 660, Pittsburgh, PA 15219.
17. C. Hubert, J. Levy, A. C. Carter, W. Chang, S. W. Kiechoefer, J. S. Horwitz, and D. B. Chrisey, Appl. Phys. Lett. 71, 3353 (1997).
18. J. C. Grenier, J. Durier, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 11, 1219 (1976).
19. S. Y. Kweon, S. H. Yi, and S. K. Choi, J. Vac. Sci. Technol. A 15, 57 (1997).
20. A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, W. Si, and X. X. Xi, Phys. Rev. Lett. 82, 4500 (1999); A. A. Sirenko, C. Bernhard, A. Golnik, A. M. Clark, J. Hao, W. Si, and X. X. Xi, Nature (London) 404, 373 (2000).
21. A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, W. Si, and X. X. Xi, Phys. Rev. Lett. 82, 4500 (1999); A. A. Sirenko, C. Bernhard, A. Golnik, A. M. Clark, J. Hao, W. Si, and X. X. Xi, Nature (London) 404, 373 (2000).
22. J. Hemberger, P. Lunkenheimer, R. Viana, R. Böhmer, and A. Loidl, Phys. Rev. B 52, 13159 (1995).