Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p -type metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Kobayashi, Shigeki ^a   Saitoh, Masumi ^a   Uchida, Ken ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; DOUBLE-GATE; EFFECTIVE MASS; HOLE POPULATIONS; LIGHT HOLES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NORMAL DIRECTION; P-TYPE; SILICON ON INSULATOR; SILICON-ON-INSULATORS; ULTRA-THIN-BODY;

DENSITY (SPECIFIC GRAVITY); DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GALERKIN METHODS; ION BEAMS; MICROSENSORS; MOSFET DEVICES; SEMICONDUCTING SILICON;

HOLE MOBILITY;

EID: 68249146196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3182792     Document Type: Article

References (16)

1. B. Hoeneisen and C. A. Mad, Solid-State Electron. 0038-1101 15, 819 (1972). 10.1016/0038-1101(72)90103-7
2. F. Yang, H. Chen, F. Chen, C. Huang, C. Chang, H. Chiu, C. Lee, C. Chen, H. Huang, C. Chen, H. Tao, Y. Yeo, M. Liang, and C. Hu, Tech. Dig.-Int. Electron Devices Meet. 2002, 255 (2002).
3. D. Esseni, M. Mastrapasqua, G. K. Celler, F. H. Baumann, C. Fiegna, L. Selmi, and E. Sangiorgi, Tech. Dig.-Int. Electron Devices Meet. 2000, 671 (2000). 0038-1101
4. Z. Ren, P. M. Solomon, T. Kanarsky, B. Doris, O. Dokumaci, P. Oldiges, R. A. Roy, E. C. Jones, M. Ieong, R. J. Miller, W. Haensch, and H. -S. P. Wong, Tech. Dig.-Int. Electron Devices Meet. 2002, 51 (2002). 0038-1101
5. K. Uchida, J. Koga, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 2003, 805 (2003). 0038-1101
6. D. Esseni, M. Mastrapasqua, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 0018-9383 50, 802 (2003). 10.1109/TED.2002.807444
7. K. Uchida, J. Koga, and S. Takagi, J. Appl. Phys. 0021-8979 102, 074510 (2007). 10.1063/1.2785957 (Pubitemid 47587888)
8. G. Tsutsui, M. Saitoh, and T. Hiramoto, IEEE Electron Device Lett. 0741-3106 26, 836 (2005). 10.1109/LED.2005.857725
9. G. Tsutsui, M. Saitoh, T. Saraya, T. Nagumo, and T. Hiramoto, Tech. Dig.-Int. Electron Devices Meet. 2005, 729 (2005). 0741-3106
10. I. Aberg and J. L. Hoyt, IEEE Electron Device Lett. 0741-3106 26, 661 (2005). 10.1109/LED.2005.853648 (Pubitemid 41430960)
11. K. Uchida and S. Takagi, Appl. Phys. Lett. 0003-6951 82, 2916 (2003). 10.1063/1.1571227
12. D. Esseni, IEEE Trans. Electron Devices 0018-9383 51, 394 (2004). 10.1109/TED.2003.822344
13. S. Jin, M. V. Fischetti, and T. -W. Tang, IEEE Trans. Electron Devices 0018-9383 54, 2191 (2007). 10.1109/TED.2007.902712
14. S. Takagi, A. Toriumi, M. Iwasa, and H. Tango, IEEE Trans. Electron Devices 0018-9383 41, 2357 (1994). 10.1109/16.337449
15. S. Takagi, M. Takayanagi, and A. Toriumi, IEEE Trans. Electron Devices 0018-9383 46, 1446 (1999). 10.1109/16.772489
16. M. De Michielis, D. Esseni, Y. L. Tsang, P. Palestri, L. Selmi, A. G. O'Neill, and S. Chattopadhyay, IEEE Trans. Electron Devices 0018-9383 54, 2164 (2007). 10.1109/TED.2007.902873