GaN micromachined FBAR structures for microwave applications

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 426-431

  Muller A ^a   Neculoiu, D ^a   Vasilache, D ^a   Dascalu, D ^a   Konstantinidis, G ^b   Kosopoulos, A ^b   Adikimenakis, A ^b   Georgakilas, A ^b   Mutamba, K ^c   Sydlo, C ^c   Hartnagel, H L ^c   Dadgar, A ^d  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d AZZURRO Semiconductors AG   (Germany)

Author keywords

Acoustic velocity; GaN membrane; Micromachining; Resonance frequencies

Indexed keywords

ACOUSTIC WAVE VELOCITY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRON GUNS; LITHOGRAPHY; MICROMACHINING;

BOTTOM-SIDE METALLIZATION; CONVENTIONAL CONTACT LITHOGRAPHY; LOW-COST MONOLITHIC INTEGRATION; RESONANCE FREQUENCIES;

GALLIUM NITRIDE;

EID: 33845202791     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.014     Document Type: Article

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