Electroluminescent devices with Ga2O3:Mn thin-film emitting layer prepared by sol-gel process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 6 A, 2000, Pages

  Minami, Tadatsugu ^a   Shirai, Tetsuya ^a   Nakatani, Toshikuni ^a   Miyata, Toshihiro ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; GALLIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; MANGANESE; OPTICAL FILMS; PHOSPHORS; SOL-GELS; THIN FILM DEVICES;

GALLIUM ACETHYLACETONATE; LUMINANCE;

LUMINESCENT DEVICES;

EID: 0033703990     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l524     Document Type: Article

References (12)