Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces

Solid State Communications

Volumn 143, Issue 10, 2007, Pages 476-480

  Benemanskaya, Galina V ^a   Ivanov, Sergey V ^a   Lapushkin, Mikhail N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A. Semiconductors; C. Surfaces and interfaces; D. Electronic band structure; E. Photoelectron spectroscopies

Indexed keywords

ADSORPTION; BAND STRUCTURE; CHARGE DENSITY; PHOTOCURRENTS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

CHARGE ACCUMULATION; ELECTRON ACCUMULATION LAYERS; ELECTRONIC BAND STRUCTURE; PHOTOCURRENT OSCILLATIONS;

GALLIUM NITRIDE;

EID: 34547810907     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.019     Document Type: Article

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