High-brightness and ultranarrow-beam 850-nm GaAs/AlGaAs photonic band crystal lasers and single-mode arrays

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 901-908

  Kettler, Thorsten ^a   Posilovic, Kristijan ^a   Karachinsky, Leonid Ya ^b   Ressel, Peter ^c   Ginolas, Arnim ^c   Fricke, Jörg ^c   Pohl, Udo W ^a   Shchukin, Vitaly A ^d   Ledentsov, Nikolai N ^a,b,e   Bimberg, Dieter ^a   Jönsson, Jan ^f   Weyers, Markus ^c   Erbert, Götz ^c   Tränkle, Günther ^a,c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^d PBC Lasers GmbH   (Germany)

^e VI SYSTEMS GMBH   (Germany)

^f Three Five Epitaxial Services AG   (Germany)

Author keywords

High brightness; High power lasers; Photonic band crystal; Semiconductor laser arrays; Semiconductor lasers; Single mode semiconductor lasers

Indexed keywords

CONTINUOUS WAVE OPERATION; CRYSTAL LASERS; FAR-FIELD; FAST AXIS; GAAS/ALGAAS; HIGH BRIGHTNESS; LARGE ARRAYS; LOW ASPECT RATIO; LOW THRESHOLD CURRENT; MAXIMUM OUTPUT POWER; OUTPUT POWER; PHOTONIC BAND CRYSTAL; PHOTONIC BANDS; PULSED MODE; RIDGE LASER; SEMICONDUCTOR LASER ARRAYS; SINGLE MODE; SINGLE-MODE LASERS; SINGLE-MODE SEMICONDUCTOR LASERS; VERTICAL BEAMS;

ASPECT RATIO; CONTINUOUS WAVE LASERS; LASER MODES; LASERS;

SEMICONDUCTOR LASERS;

EID: 67650904482     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2013179     Document Type: Article

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