Single transverse mode 850nm GaAs/AlGaAs lasers with narrow beam divergence

Electronics Letters

Volumn 42, Issue 20, 2006, Pages 1157-1159

  Kettler, T ^a   Posilovic, K ^a   Schulz, O ^a   Karachinsky, L Ya ^b   Novikov, I I ^b   Shernyakov, Yu M ^b   Kuznetsov, S M ^b   Gordeev, N Yu ^b   Maximov, M V ^b   Ben Ami, U ^c   Sharon, A ^c   Mikhrin, S S ^d   Kovsh, A R ^d   Shchukin, V A ^a   Kop'ev, P S ^b   Ledentsov, N N ^a   Pohl, U W ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c PBC Lasers Ltd   (Israel)

^d NL Nanosemiconductor GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM; THERMAL EFFECTS; WAVEGUIDE COMPONENTS;

FAR FIELD PATTERN; INJECTION CURRENT; NARROW BEAM DIVERGENCE; RANGE LASERS;

LASER APPLICATIONS;

EID: 33749340054     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062221     Document Type: Article

References (14)

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