Band-structure engineering of a cubic GaN quantum-well laser

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 194-196

  Ahn, Doyeol ^a,b  

^a IEEE

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; VECTORS;

CUBIC GALLIUM NITRIDE QUANTUM WELL LASER; LASING THRESHOLD; LUTTINGER KOHN MODEL; OPTICAL GAIN; SPIN ORBIT SPLIT OFF BAND COUPLING;

QUANTUM WELL LASERS;

EID: 0030080830     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484238     Document Type: Article

References (16)

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