Optical feedback tolerance of quantum-dot- and quantum-dash-based semiconductor lasers operating at 1.55 μm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 764-773

  Azouigui, Shéhérazade ^a,b   Dagens, Béatrice ^c   Lelarge, Francois ^d   Provost, Jean Guy ^d   Make, Dalila ^d   Le Gouezigou, Odile ^d   Accard, Alain ^d   Martinez, Anthony ^a   Merghem, Kamel ^a   Grillot, Frédéric ^e   Dehaese, Olivier ^e   Piron, Rozenn ^e   Loualiche, Slimane ^e   Zou, Qin ^b   Ramdane, Abderrahim ^a,b  

^a CNRS   (France)

^b INSTITUT TELECOM   (France)

^c UNIV PARIS SUD   (France)

^d ALCATEL THALES III V LAB   (France)

^e UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Coherence collapse; Optical feedback; Quantum dash; Quantum dot; Semiconductor laser

Indexed keywords

CAVITY LENGTH; COHERENCE COLLAPSE; DIFFERENTIAL GAIN; EXTERNAL REFLECTION; INAS/INP; INJECTION CURRENTS; LASER CAVITY; LASER PARAMETERS; MATERIAL SYSTEMS; OPERATING TEMPERATURE; PHOTON LIFETIME; QUANTUM DASH; QUANTUM DASHES; QUANTUM DOT; QUANTUM DOTS; QUANTUM WELL; TEMPERATURE RANGE;

LASERS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL; WINDOWS;

FEEDBACK;

EID: 67650789644     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2013870     Document Type: Article

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