-
1
-
-
0031108828
-
InGaAs-GaAs quantum-dot lasers
-
10.1109/2944.605656 1077-260X
-
Bimberg, D., Kirstaedter, N., Ledentsov, N.N., Alferov, ZH.I., Kop'ev, P.S., and Ustinov, V.M.: ' InGaAs-GaAs quantum-dot lasers ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, (2), p. 196-205 10.1109/2944.605656 1077-260X
-
(1997)
IEEE J. Sel. Top. Quantum Electron.
, vol.3
, Issue.2
, pp. 196-205
-
-
Bimberg, D.1
Kirstaedter, N.2
Ledentsov, N.N.3
Alferov, Z.I.4
Kop'Ev, P.S.5
Ustinov, V.M.6
-
2
-
-
0032689040
-
0.85As quantum well
-
10.1049/el:19990811 0013-5194
-
0.85As quantum well ', Electron. Lett., 1999, 35, (14), p. 1163-1165 10.1049/el:19990811 0013-5194
-
(1999)
Electron. Lett.
, vol.35
, Issue.14
, pp. 1163-1165
-
-
Liu, G.T.1
Stintz, A.2
Li, H.3
Malloy, K.J.4
Lester, L.F.5
-
3
-
-
0036743142
-
0 1.3m InAs quantum dot lasers due to p-type modulation doping of the active region
-
10.1109/LPT.2002.801597 1041-1135
-
0 1.3m InAs quantum dot lasers due to p-type modulation doping of the active region ', IEEE Photonics Technol. Lett., 2002, 14, (9), p. 1231-1233 10.1109/LPT.2002. 801597 1041-1135
-
(2002)
IEEE Photonics Technol. Lett.
, vol.14
, Issue.9
, pp. 1231-1233
-
-
Shchekin, O.B.1
Deppe, D.G.2
-
4
-
-
17444401748
-
Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
-
10.1134/1.1900266
-
Novikov, I.I., Gordeev, N.YU., Karachinski, L.YA., Maksimov, M.V., Shernyakov, YU.M., Kovsh, A.R., Krestinkov, I.I., Kozhukhov, A.V., Mikhrin, S.S., and Ledentsov, N.N.: ' Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers ', Semiconductors, 2005, 39, (4), p. 477-480 10.1134/1.1900266
-
(2005)
Semiconductors
, vol.39
, Issue.4
, pp. 477-480
-
-
Novikov, I.I.1
Gordeev, N.Yu.2
Karachinski, L.Ya.3
Maksimov, M.V.4
Shernyakov, Y.M.5
Kovsh, A.R.6
Krestinkov, I.I.7
Kozhukhov, A.V.8
Mikhrin, S.S.9
Ledentsov, N.N.10
-
5
-
-
21044437832
-
Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: Temperature insensitive 10Gbps directly modulated lasers and 40 Gbps signal-regenerative amplifiers
-
10.1088/0022-3727/38/13/008 0022-3727
-
Sugawara, M., Hatori, N., Ishida, M., Ebe, H., Arakawa, Y., Akiyama, T., Otsubo, K., Yamamoto, T., and Nakata, Y.: ' Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature insensitive 10Gbps directly modulated lasers and 40 Gbps signal-regenerative amplifiers ', J. Phys. D, Appl. Phys., 2005, 38, (13), p. 2126-2134 10.1088/0022-3727/38/13/008 0022-3727
-
(2005)
J. Phys. D, Appl. Phys.
, vol.38
, Issue.13
, pp. 2126-2134
-
-
Sugawara, M.1
Hatori, N.2
Ishida, M.3
Ebe, H.4
Arakawa, Y.5
Akiyama, T.6
Otsubo, K.7
Yamamoto, T.8
Nakata, Y.9
-
6
-
-
0242302619
-
High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers
-
10.1109/LPT.2003.818627 1041-1135
-
Su, H., Zhang, L., Gray, A.L., Wang, R., Newell, T.C., Malloy, K., and Lester, L.F.: ' High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers ', IEEE Photonics Technol. Lett., 2003, 15, (11), p. 1504-1506 10.1109/LPT.2003.818627 1041-1135
-
(2003)
IEEE Photonics Technol. Lett.
, vol.15
, Issue.11
, pp. 1504-1506
-
-
Su, H.1
Zhang, L.2
Gray, A.L.3
Wang, R.4
Newell, T.C.5
Malloy, K.6
Lester, L.F.7
-
7
-
-
0346392597
-
Feedback sensitivity of 1.3 m InAs/GaAs quantum dot laser
-
10.1049/el:20031153 0013-5194
-
O'Brien, D., Hegarty, S.P., Huyet, G., McInerney, J.G., Kettler, Laemmlin, T., Bimberg, D., Ustinov, V.M., Zhukov, A.E., Mikhrin, S.S., and Kovsh, A.R.: ' Feedback sensitivity of 1.3 m InAs/GaAs quantum dot laser ', Electron. Lett., 2003, 39, (25), p. 1819-1820 10.1049/el:20031153 0013-5194
-
(2003)
Electron. Lett.
, vol.39
, Issue.25
, pp. 1819-1820
-
-
O'Brien, D.1
Hegarty, S.P.2
Huyet, G.3
McInerney, J.G.4
Kettler Laemmlin, T.5
Bimberg, D.6
Ustinov, V.M.7
Zhukov, A.E.8
Mikhrin, S.S.9
Kovsh, A.R.10
-
8
-
-
1342345988
-
Impact of intraband relaxation on the performance of a quantum-dot laser
-
10.1109/JSTQE.2003.819494 1077-260X
-
Markus, A., Chen, J.X., Gauthier-Lafaye, O., Provost, J.-G., Paranthoen, C., and Fiore, A.: ' Impact of intraband relaxation on the performance of a quantum-dot laser ', IEEE J. Sel. Top. Quantum Electron., 2003, 9, (5), p. 1308-1314 10.1109/JSTQE.2003.819494 1077-260X
-
(2003)
IEEE J. Sel. Top. Quantum Electron.
, vol.9
, Issue.5
, pp. 1308-1314
-
-
Markus, A.1
Chen, J.X.2
Gauthier-Lafaye, O.3
Provost, J.-G.4
Paranthoen, C.5
Fiore, A.6
-
9
-
-
20844443259
-
Static and dynamic measurements of the α-factor of five-quantum-dot-layer single-mode lasers emitting at 1.3mm on GaA
-
10.1063/1.1935754 0003-6951
-
Martinez, A., Lemaître, A., Merghem, K., Ferlazzo, L., Dupuis, C., Ramdane, A., Provost, J.-G., Dagens, B., Legouezigou, O., and Gauthier-Lafaye, O.: ' Static and dynamic measurements of the α-factor of five-quantum-dot-layer single-mode lasers emitting at 1.3mm on GaA ', Appl. Phys. Lett., 2005, 86, p. 211115-1 10.1063/1.1935754 0003-6951
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 211115-1
-
-
Martinez, A.1
Lemaître, A.2
Merghem, K.3
Ferlazzo, L.4
Dupuis, C.5
Ramdane, A.6
Provost, J.-G.7
Dagens, B.8
Legouezigou, O.9
Gauthier-Lafaye, O.10
-
10
-
-
33645505759
-
The linewidth enhancement factor α of quantum dot semiconductor lasers
-
1094-4087
-
Melnik, S., and Huyet, G.: ' The linewidth enhancement factor α of quantum dot semiconductor lasers ', Opt. Express, 2006, 14, (7), p. 2950-2955 1094-4087
-
(2006)
Opt. Express
, vol.14
, Issue.7
, pp. 2950-2955
-
-
Melnik, S.1
Huyet, G.2
|