Irradiation induced effects on Ni3N/Si bilayer system

Vacuum

Volumn 83, Issue 12, 2009, Pages 1448-1453

  Dhunna, Renu ^a   Lal, Chhagan ^a   Avasthi, D K ^b   Barman, S R ^c   Ganesan, V ^c   Jain, I P ^a  

^a UNIVERSITY OF RAJASTHAN   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Atomic force microscopy; Interface; Nitrides; X ray photoelectron spectroscopy

Indexed keywords

BI-LAYER; BILAYER SYSTEMS; FLUENCE; GRAZING INCIDENCE X-RAY DIFFRACTION; I-V MEASUREMENTS; IN-SITU; INTERFACE; ION-BEAM SPUTTERING; IRRADIATION EFFECT; IRRADIATION-INDUCED EFFECTS; NITRIDE FILMS; ROOM TEMPERATURE; SI(1 0 0); X RAY REFLECTIVITY;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; BINDING ENERGY; BINDING SITES; IONS; IRRADIATION; NICKEL; NITRIDES; NUCLEAR ENERGY; OPTICAL PROPERTIES; PHASE INTERFACES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; POTENTIAL ENERGY; SILICON; SPUTTERING; THIN FILMS; X RAY DIFFRACTION; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650762200     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.003     Document Type: Article

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