Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Lu, Jun Qiang ^a   Johnson, H T ^a   Dasika, V D ^b   Goldman, R S ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUBOIDAL GAAS NANOSTRUCTURES; INAS/GAAS QUANTUM DOTS; LOCAL DENSITY;

ATOMIC PHYSICS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

NANOSTRUCTURED MATERIALS;

EID: 31944446256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171473     Document Type: Article

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