Correlation between microstructure and localized band gap of GaN grown on SiC

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7726-7729

  Bangert, U ^a   Harvey, A ^a   Davidson, J ^a   Keyse, R ^b   Dieker, C ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038200839     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367945     Document Type: Article

References (5)

1. R. F. Egerton, in Electron Energy Loss Spectroscopy in the Electron Microscope, edited by Egerton (Plenum, New York, 1996), p. 414.
2. C. V. Festenberg, Z. Phys. 227, 453 (1969).
3. D. M. Tricker, M. K. H. Natusch, C. B. Boothroyd, Y. Xin, P. D. Brown, T. S. Cheng, C. T. Foxon, and C. J. Humphreys, Inst. Phys. Conf. Ser. (to be published).
4. U. Bangert, A. J. Harvey, and R. Keyse, Ultramicroscopy 68, 173 (1997).
5. S. Logothetidis, J. Petalas, and T. D. Cardona Mand Moustakas, Phys. Rev. B 50, 18017 (1994).