Efficient simulations of 6σ VT distributions due to random discrete dopants

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 23-26

  Reid, Dave ^a   Millar, Campbell ^a   Roy, Gareth ^a   Roy, Scott ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

3D SIMULATIONS; COMPUTATIONAL COSTS; EFFICIENT SIMULATION; MOSFETS; PHYSICAL PROCESS; RANDOM DOPANTS; ROBUST METHODS; STATISTICAL ANALYSIS; STATISTICAL SAMPLES; THRESHOLD VOLTAGE VARIATION;

MOSFET DEVICES; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS; THRESHOLD VOLTAGE;

DOPING (ADDITIVES);

EID: 67650682509     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897530     Document Type: Conference Paper

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