MIS gas sensors based on porous silicon with Pd and WO3/Pd electrodes

Thin Solid Films

Volumn 517, Issue 22, 2009, Pages 6202-6205

  Solntsev, V S ^a   Gorbanyuk, T I ^a   Litovchenko, V G ^a   Evtukh, A A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Catalytic gate electrode; Gas sensor; Hydrogen sulphide response; MIS structure with porous silicon layer

Indexed keywords

ACTIVE SURFACES; CATALYTIC GATE ELECTRODE; CHEMICAL COMPOSITIONS; DIFFERENT MECHANISMS; ENHANCED SENSITIVITY; GAS SENSITIVITY; GAS SENSOR; GAS SENSORS; GAS-SENSITIVE STRUCTURE; GATE ELECTRODES; HIGH FREQUENCY; HYDROGEN SULPHIDE; HYDROGEN SULPHIDE RESPONSE; KINETIC CHARACTERISTICS; MIS-STRUCTURE WITH POROUS SILICON LAYER; PD ELECTRODES; PD FILM; PD GATES; POROUS SILICON LAYERS; RESPONSE TIME; SENSOR RESPONSE;

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTIONS; CHEMICAL SENSORS; ELECTRODES; GAS ADSORPTION; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; HYDROGEN; HYDROGEN SULFIDE; PLASTIC DEFORMATION; POROUS SILICON; REFRACTORY METAL COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SWITCHING CIRCUITS;

PALLADIUM;

EID: 67650401085     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.012     Document Type: Article

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