SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 495, Issue 1-2, 2006, Pages 134-138

Porous silicon microstructure and composition characterization depending on the formation conditions

(5) Gorbanyuk, T I a Evtukh, A A a Litovchenko, V G a Solnsev, V S b Pakhlov, E M c

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV (Ukraine)

c INSTITUTE OF SURFACE CHEMISTRY (Ukraine)

Author keywords

FTIR spectroscopy; Oxidized macroporous silicon layers; Polymerized mesoporous silicon films

Indexed keywords

CONCENTRATION (PROCESS); CURRENT DENSITY; HYDROFLUORIC ACID; INFRARED SPECTROSCOPY; MICROSTRUCTURE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

FTIR SPECTRUM; OXIDIZED MACROPOROUS SILICON LAYERS; POLYMERIZED MESOPOROUS SILICON FILMS;

POROUS SILICON;

EID: 28044443700 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.08.188 Document Type: Conference Paper

Times cited : (44)

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