Nanoporous silicon doped by Cu for gas-sensing applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 38, Issue 1-2, 2007, Pages 211-214

  Gorbanyuk, T I ^a   Evtukh, A A ^a   Litovchenko, V G ^a   Solntsev, V S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Copper clusters; Hydrogen sulphide sensitivity; Layered semiconductor MIS structures; Nanoporous silicon doped by copper

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL SENSORS; COPPER; DOPING (ADDITIVES); HYDROGEN SULFIDE; MIS DEVICES; NANOPORES; SECONDARY ION MASS SPECTROMETRY;

COPPER CLUSTERS; HYDROGEN SULPHIDE SENSITIVITY; LAYERED SEMICONDUCTOR MIS STRUCTURES; NANOPOROUS SILICON; OPTIC MICROSCOPES;

SILICON;

EID: 34147184303     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.12.038     Document Type: Article

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