Fabrication and evaluation of a thermoelectric microdevice on a free-standing substrate

Journal of Electronic Materials

Volumn 38, Issue 7, 2009, Pages 1326-1330

  Kurosaki, J ^a   Yamamoto, A ^a   Tanaka, S ^a   Cannon, J ^a   Miyazaki, K ^a   Tsukamoto, H ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bismuth telluride; MEMS; Microdevice; Thermoelectricity; Waste heat recovery

Indexed keywords

BISMUTH TELLURIDE; BISMUTH TELLURIDE THIN FILMS; FREE-STANDING THIN FILMS; IN-PLANE; MAXIMUM OUTPUT; MICRO DEVICES; MICRODEVICE; MICROFABRICATION PROCESS; N-TYPE SEMICONDUCTORS; OUTPUT VOLTAGES; P TYPE SEMICONDUCTOR; SHADOW MASK; SI SUBSTRATES; SI WAFER; THERMOELECTRIC DEVICES; THERMOELECTRIC THIN FILMS; WASTE HEAT RECOVERY;

BISMUTH; ELECTRIC POTENTIAL; MEMS; MICROELECTROMECHANICAL DEVICES; PORTABLE EQUIPMENT; SEMICONDUCTING SELENIUM COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES; THIN FILMS; WASTE HEAT; WASTE HEAT UTILIZATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650395335     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0819-y     Document Type: Conference Paper

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