Preparation and characterization of MOCVD bismuth telluride thin films

Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 336-341

  Boulouz, A ^a   Giani, A ^a   Pascal Delannoy, F ^a   Boulouz, M ^a   Foucaran, A ^a   Boyer, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Bi2Te3; Hall mobility and resistivity; MOCVD; Seebeck coefficient

Indexed keywords

HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEEBECK EFFECT; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING TELLURIUM COMPOUNDS; THERMOELECTRICITY;

HALL MOBILITY; SEEBECK COEFFICIENT;

THIN FILMS;

EID: 0032293856     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00690-3     Document Type: Article

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