Surface reactions during low- k etching using H2 N2 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 870-874

  Fukasawa, Masanaga ^a   Tatsumi, Tetsuya ^a   Oshima, Keiji ^a   Nagahata, Kazunori ^a   Uchida, Saburo ^b   Takashima, Seigo ^b   Hori, Masaru ^b   Kamide, Yukihiro ^a  

^a SONY CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DISTRIBUTION FUNCTIONS; ETCHING; HYDROPHOBICITY; INDUCTIVELY COUPLED PLASMA; IONS; PLASMA APPLICATIONS; PLASMAS; SURFACE CHEMISTRY; TELEMETERING SYSTEMS;

(1 1 0) SURFACE; ADSORPTION SITES; AIR EXPOSURE; BIAS POWER; CAPACITIVELY COUPLED PLASMA (CCP); DIELECTRIC CONSTANTS; DOMINANT FACTORS; HARD MASKS; HYDROPHOBIC SURFACES; IN ORDER; ION ENERGIES; ION ENERGY DISTRIBUTION FUNCTION (IEDF); ION SPECIES; MOISTURE UPTAKE; PRECISE CONTROL; SIOC-H FILM; WATER PERMEATION;

SURFACE REACTIONS;

EID: 46449110524     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2839764     Document Type: Article

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