Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

Journal of Quantitative Spectroscopy and Radiative Transfer

Volumn 102, Issue 3, 2006, Pages 343-347

  Erzeneoglu S ^a   Icelli O ^a   Gurbulak B ^a   Ates A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Energy dispersive X ray spectrometry; Mass attenuation coefficients; Semiconductors

Indexed keywords

ATTENUATION; CONCENTRATION (PROCESS); CRYSTALS; ENERGY DISPERSIVE SPECTROSCOPY; HOLMIUM; SEMICONDUCTOR DOPING; X RAY SPECTROMETERS;

ABSORPTION EDGE; BRIDGMAN-STROCBARGER METHOD; ENERGY DISPERSIVE X-RAY SPECTROMETRY; MASS ATTENUATION COEFFICIENTS;

SEMICONDUCTING INDIUM COMPOUNDS;

MASS; SPECTROMETRY;

EID: 33747378598     PISSN: 00224073     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jqsrt.2005.06.001     Document Type: Article

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