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Materials Science and Engineering B

Volumn 56 B56, Issue 1, 1998, Pages 69-71

Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions

(1) Ullrich, B a,b

a UNIVERSITY OF TOKYO (Japan)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

Author keywords

Heterostructures; Indium selenide; Molecular beam epitaxy; Photocurrent; Silicon; Zinc selenide

Indexed keywords

CRYSTAL LATTICES; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOCURRENTS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

INDIUM SELENIDE; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0032475649 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/s0921-5107(98)00178-0 Document Type: Article

Times cited : (20)

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