Investigation of the electrical properties of Ho-doped InSe single crystal

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 1, 2004, Pages 85-90

  Ateş, Aytunç ^a   Yildirim, Muhammet ^a   Gürbulak, Bekir ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Electrical properties; Ho rare element; InSe

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; HALL EFFECT; MAGNETORESISTANCE; PHOTOVOLTAIC CELLS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SOLAR ENERGY;

STOICHIOMETRIC RATIO; TEMPERATURE DEPENDENCE;

SINGLE CRYSTALS;

EID: 1042304330     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.074     Document Type: Article

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