Transient characteristics of the reset programming of a phase-change line cell and the effect of the reset parameters on the obtained state

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1499-1506

  Goux, Ludovic ^a   Gille, Thomas ^a   Tio Castro, David ^b   Hurkx, G A M ^b   Lisoni, Judit G ^a   Delhougne, Romain ^b   Gravesteijn, Diek J ^b   De Meyer, Kristin ^a   Attenborough, Karen ^b   Wouters, Dirk J ^a  

^a IMEC   (Belgium)

^b NXP TSMC Research Center   (Belgium)

Author keywords

Chalcogenides; Nonvolatile memories; Phasechange memories

Indexed keywords

CURRENT PULSE; ELECTRICAL CELLS; FINITE ELEMENT SIMULATIONS; MOLTEN PHASIS; NONVOLATILE MEMORIES; PHASE CHANGES; PHYSICAL PARAMETERS; PULSE PARAMETER; PULSEWIDTHS; RESET CURRENTS; RESET PULSE; TEMPORAL AND SPATIAL DISTRIBUTION; THERMAL ISOLATION; TRANSIENT CHARACTERISTIC;

CELL MEMBRANES; CHALCOGENIDES; ELECTRIC PROPERTIES; HEATING; SIZE DISTRIBUTION; THRESHOLD VOLTAGE;

PHASE CHANGE MEMORY;

EID: 67650131377     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021444     Document Type: Article

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