Field effect transistor based on SiO2-Si with SrTiO 3-δ as the source and drain

Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

  Yang, Fang ^a   Jin, Kui Juan ^a   Lu, Hui Bin ^a   He, Meng ^a   Yang, Guo Zhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN-SOURCE CURRENTS; DRAIN-SOURCE VOLTAGE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE VOLTAGES; ON/OFF RATIO; P-TYPE SI; PEROVSKITE OXIDE THIN FILMS; ROOM TEMPERATURE; SOURCE AND DRAINS; SRTIO;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; MESFET DEVICES; OXIDE FILMS; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRONTIUM ALLOYS;

SEMICONDUCTING SILICON;

EID: 67650086958     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/4/045116     Document Type: Article

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