Red shift of near band edge emission in cerium implanted GaN

Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

  Majid, Abdul ^a   Ali, Akbar ^a  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BAND EMISSION; BAND GAP NARROWING; DONOR-BOUND EXCITON; HEAVILY DOPED; NEAR BAND EDGE EMISSIONS; OPTICAL TRANSMISSION MEASUREMENTS; PEAK POSITION; RARE EARTH DOPING; RE ELEMENTS; RED SHIFT; SHALLOW DONORS;

ACTIVATION ENERGY; ASTROPHYSICS; CERIUM COMPOUNDS; DOPING (ADDITIVES); DOPPLER EFFECT; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

CERIUM;

EID: 67650073386     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/4/045412     Document Type: Article

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