Effect of annealing on photoluminescence properties of neon implanted GaN

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Majid, Abdul ^a,b   Ali, Akbar ^b   Zhu, J J ^a   Wang, Y T ^a   Liu, W ^a   Lu, G J ^a   Liu, W B ^a   Zhang, L Q ^a   Liu, Z S ^a   Zhao, D G ^a   Zhang, S M ^a   Jiang, D S ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b QUAID I AZAM UNIVERSITY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOCIATION; ION IMPLANTATION; NEON; PHOTOLUMINESCENCE; THERMAL EFFECTS;

HIGH ENERGY ION IMPLANTATION; LUMINESCENCE PROPERTIES; YELLOW LUMINESCENCE BAND;

GALLIUM NITRIDE;

EID: 38049034349     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/025107     Document Type: Article

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