Reducing Cu diffusion in SiCOH low-k films by O2 plasma treatment

Microelectronic Engineering

Volumn 86, Issue 10, 2009, Pages 2119-2122

  Yuan, Jing ^a   Ye, Chao ^a   Xing, Zhenyu ^a   Xu, Yijun ^a   Ning, Zhaoyuan ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

Cu diffusion; O2 plasma treatment; Porous SiCOH films

Indexed keywords

ACTIVATION ENERGY E; ACTIVE ENERGY; AFM; BONDING CONFIGURATIONS; CAPACITANCE VOLTAGE; CU DIFFUSION; CU IONS; CURRENT-VOLTAGE MEASUREMENTS; FLAT-BAND VOLTAGE SHIFT; FTIR; INTERCONNECTED PORES; LOW-DIELECTRIC CONSTANT FILM; LOW-K FILMS; O2 PLASMA TREATMENT; PLASMA SURFACE TREATMENT; PLASMA TREATMENT; POROUS SICOH FILMS; SICOH FILMS;

ACTIVATION ENERGY; DIFFUSION; FLOATING BREAKWATERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROCRYSTALLINE SILICON; PLASMA APPLICATIONS; PLASMAS; STRENGTH OF MATERIALS; STRESS ANALYSIS; SURFACE DIFFUSION; SURFACE TREATMENT;

COPPER;

EID: 67649998177     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.023     Document Type: Article

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