Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2189-2193

  Mukaigawa, Seiji ^a   Aoki, Tomoko ^b   Shimizu, Yasuo ^b   Kikkawa, Takamaro ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Tonen Corp   (Japan)

Author keywords

BTS; Cu drift; Flatband voltage; Low K dielectric film; Methylsilsesquiazane; Methylsilsesquioxane; TDDB

Indexed keywords

COPPER; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING POLYMERS; THERMAL STRESS; VOLTAGE MEASUREMENT;

BIAS TEMPERATURE STRESS; CAPACITOR VOLTAGE ANALYSIS; FLATBAND VOLTAGE; METHYLSILSESQUIAZANE; METHYLSILSESQUIOXANE; POLYARYLENE ETHER;

DIELECTRIC FILMS;

EID: 0033684322     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2189     Document Type: Article

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