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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1058-1062

Light emission from Ge and GeO2 nanocrystals

(2) Zacharias, M a,b Fauchet, P M a

a University of Rochester (United States)

b OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

Confined excitons; DC magnetron sputtering; Ge O related defect; Infrared absorption; Light emission

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; EXCITONS; INFRARED RADIATION; LIGHT ABSORPTION; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS;

GERMANIUM DIOXIDE;

NANOSTRUCTURED MATERIALS;

EID: 0032065070 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00241-5 Document Type: Article

Times cited : (90)

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