Optical and microstructural properties of doubly Ge-Si implanted SiO 2 layers

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 693-697

  Prucnal, S ^a,b   Cheng, X Q ^b   Sun, J M ^b   Kogler R ^b   Zuk, J ^a   Skorupa, W ^b  

^a MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Double ion implantation; Germanium; Photoluminescence; Silicon; Silicon dioxide

Indexed keywords

CONCENTRATION (PROCESS); GERMANIUM; ION IMPLANTATION; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA;

DOUBLE ION IMPLANTATION; NANOCLUSTER; OPTICAL EMISSION; OXIDE SURFACE;

SILICON COMPOUNDS;

EID: 18444385376     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.108     Document Type: Conference Paper

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