Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3687-3691

  Hamada, Takahiro ^a   Ito, Akihiro ^a   Fujii, Eiji ^a   Chu, Dewei ^b   Kato, Kazumi ^b   Masuda, Yoshitake ^b  

^a PANASONIC CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Crystal structure; A1. X ray diffraction; A2. Growth from solutions; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. X-RAY DIFFRACTION; A2. GROWTH FROM SOLUTIONS; B1. OXIDES; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS;

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; CORUNDUM; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DIFFRACTION; FILM PREPARATION; METALLIC FILMS; OXIDE FILMS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSITION METAL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

ZINC OXIDE;

EID: 67649922512     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.004     Document Type: Article

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