|
Volumn 80, Issue 11, 2002, Pages 1951-1953
|
Atomistic-to-continuum description of vacancy cluster properties in crystalline silicon
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CLUSTER FORMATIONS;
CRYSTALLINE SILICONS;
EXPERIMENTAL MEASUREMENTS;
INTERATOMIC POTENTIAL;
PROCESS SIMULATORS;
SI (1 1 1);
SIZE SCALING;
SYNERGISTIC COMBINATIONS;
THERMAL-ANNEALING;
VACANCY CLUSTER;
VOID FORMATION;
CRYSTAL GROWTH;
FREE ENERGY;
MOLECULAR DYNAMICS;
RADIATION DAMAGE;
SILICON WAFERS;
|
EID: 79955994679
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1461050 Document Type: Article |
Times cited : (32)
|
References (19)
|