The bipolar doping of ZnS via native defects and external dopants

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Gai, Yanqin ^a,b,c   Li, Jingbo ^a   Yao, Bin ^b   Xia, Jian Bai ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPANTS; FIRST-PRINCIPLE; IONIZATION ENERGIES; LATTICE SITES; N-TYPE DOPING; NATIVE DEFECT; P-TYPE; RICH CONDITIONS; SPONTANEOUS FORMATION; SYSTEMATIC STUDY; TOTAL-ENERGY CALCULATIONS; VALENCE-BAND MAXIMUMS; ZNO;

HIGH ENERGY FORMING; IONIZATION POTENTIAL; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; ZINC; ZINC OXIDE;

ZINC SULFIDE;

EID: 67649566418     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103585     Document Type: Article

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