Physical model for the resistivity and temperature coefficient of resistivity in heavily doped polysilicon

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1885-1892

  Raman, Manjula S ^a   Kifle, Teweldebhran ^a   Bhattacharya, Enakshi ^a   Bhat, K N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Amorphous silicon; Exponential band tail; Grain boundary; Polysilicon; Temperature coefficient of resistivity (TCR)

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; OPTIMIZATION; POLYSILICON; RESISTORS; SEMICONDUCTING BORON; SINGLE CRYSTALS;

EXPONENTIAL BAND TAIL; POLYSILICON RESISTORS; TEMPERATURE COEFFICIENT OF RESISTIVITY (TCR);

SEMICONDUCTOR DOPING;

EID: 33746605671     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.878020     Document Type: Article

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