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Volumn 17, Issue 9, 2002, Pages 983-992
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Characterization of sub-micrometre silicon films (Si-LPCVD) heavily in situ boron-doped and submitted to treatments of dry oxidation
a a a a b a c |
Author keywords
[No Author keywords available]
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Indexed keywords
BORON;
CHEMICAL VAPOR DEPOSITION;
ELECTRIC CONDUCTIVITY;
GRAIN GROWTH;
OXIDATION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
DRY OXIDATION;
THIN FILMS;
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EID: 0036713878
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/17/9/315 Document Type: Article |
Times cited : (2)
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References (37)
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