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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 592-596

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

(2) Shauly, Eitan N a,b Lachman Shalem, Sivan b

a TOWER SEMICONDUCTOR LTD (Israel)

b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CHEMICAL ACTIVATION; COMPUTER SIMULATION; DIFFUSION; EPITAXIAL GROWTH; FLUORINE; HEAT TREATMENT; ION IMPLANTATION; MONTE CARLO METHODS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON; SOLUBILITY;

ELECTRICAL ACTIVATION; HOLE CARRIERS; RADIATION DEFECT COMPLEXES; SHEET RESISTANCE;

BORON;

EID: 2342563099 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1651548 Document Type: Article

Times cited : (9)

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