메뉴 건너뛰기




Volumn , Issue , 2005, Pages 121-124

Scalability of SOI CMOS technology and circuit to millimeter wave performance

Author keywords

[No Author keywords available]

Indexed keywords

MICROPROCESSOR CHIPS; MILLIMETER WAVE DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

EID: 30944464048     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531780     Document Type: Conference Paper
Times cited : (10)

References (18)
  • 1
    • 14844298187 scopus 로고    scopus 로고
    • RF CMOS comes of age
    • April
    • A. A. Abidi, "RF CMOS Comes of Age," J. Solid-Stale Circuits. Vol. 39, No. 4, pp 549-561, April 2004.
    • (2004) J. Solid-stale Circuits , vol.39 , Issue.4 , pp. 549-561
    • Abidi, A.A.1
  • 2
  • 3
    • 0035054939 scopus 로고    scopus 로고
    • A 50 GHz VCO in 0.25 um CMOS
    • 5-7 Feb.
    • H. Wang, "A 50 GHz VCO in 0.25 um CMOS," ISSCC. 2001, 5-7 Feb. 2001, pp. 372-373
    • (2001) ISSCC. 2001 , pp. 372-373
    • Wang, H.1
  • 6
    • 0041947475 scopus 로고    scopus 로고
    • Suitability of scaled SOI for high-frequency analog circuits
    • September
    • N. Zamdmer, JO. Plouchart, J. Kim, et al. "Suitability of Scaled SOI for High-Frequency Analog Circuits," ESSDERC, September 2002.
    • (2002) ESSDERC
    • Zamdmer, N.1    Plouchart, J.O.2    Kim, J.3
  • 7
    • 0043162165 scopus 로고    scopus 로고
    • High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
    • June
    • J. Kim, JO. Plouchart, et al., "High-Performance Three-Dimensional On-chip Inductors in SOI CMOS Technology for Monolithic RF Circuit Applications," RFIC Sym. Dig. Papers, pp 591-594, June 2003.
    • (2003) RFIC Sym. Dig. Papers , pp. 591-594
    • Kim, J.1    Plouchart, J.O.2
  • 8
    • 23944446418 scopus 로고    scopus 로고
    • max, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
    • July
    • max, 90-nm SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability," IEEE Transactions on Electron Devices. Vol. 52, Issue 7, July 2005, pp. 1370-1375.
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.7 , pp. 1370-1375
    • Plouchart, J.O.1
  • 10
    • 0141538352 scopus 로고    scopus 로고
    • Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz fT, 80 GHz fMAX RF CMOS, high-Q MiM capacitor and spiral Cu inductor
    • June
    • J. C. Guo, W.Y. Lien, M.C. Hung, C.C. Liu, C.W. Chen, C.M. Wu, Y.C. Sun, and P. Yang, "Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz fT, 80 GHz fMAX RF CMOS, high-Q MiM capacitor and spiral Cu inductor," IEEE Symposium on VLSI Technology, pp. 39-40, June 2003.
    • (2003) IEEE Symposium on VLSI Technology , pp. 39-40
    • Guo, J.C.1    Lien, W.Y.2    Hung, M.C.3    Liu, C.C.4    Chen, C.W.5    Wu, C.M.6    Sun, Y.C.7    Yang, P.8
  • 11
    • 30944435655 scopus 로고    scopus 로고
    • Agilent product ATF-36077
    • Agilent product ATF-36077
  • 12
    • 0141761455 scopus 로고    scopus 로고
    • 3-Dimensional vertical parallel plate capacitors in an SOI CMOS technology for integrated RF circuits
    • June
    • J. Kim, JO. Plouchart, et al., "3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits," VLSI Circuit Sym. Dig. Papers, pp 29-32, June 2003.
    • (2003) VLSI Circuit Sym. Dig. Papers , pp. 29-32
    • Kim, J.1    Plouchart, J.O.2
  • 13
    • 28144442261 scopus 로고    scopus 로고
    • A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12μm SOI CMOS
    • February
    • J. Kim, JO. Plouchart, et al. "A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12μm SOI CMOS," ISSCC, Tech. Dig. Papers, pp. 416-418, February 2005.
    • (2005) ISSCC, Tech. Dig. Papers , pp. 416-418
    • Kim, J.1    Plouchart, J.O.2
  • 14
    • 21644474327 scopus 로고    scopus 로고
    • SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps
    • M. Khater, et. al., "SiGe HBT Technology with fmax/fT = 350/300 GHz and Gate Delay Below 3.3 ps," IEEE IEDM, 2004, pp. 247-250.
    • (2004) IEEE IEDM , pp. 247-250
    • Khater, M.1
  • 15
    • 0142020830 scopus 로고    scopus 로고
    • 3.21 ps ECL gate using InP/lnGaAs DHBT technology
    • Oct.
    • K. Ishii, et. al., "3.21 ps ECL gate using InP/lnGaAs DHBT technology," Electroni. Lett., Vol. 39, pp. 1434-1436, Oct. 2003.
    • (2003) Electroni. Lett. , vol.39 , pp. 1434-1436
    • Ishii, K.1
  • 16
    • 2442680724 scopus 로고    scopus 로고
    • A 12-dBm 320-GHz GBW distributed amplifier in a SOI 0.12 μm CMOS technology
    • February
    • J. Kim, JO. Plouchart, N. Zamdmer, et al. "A 12-dBm 320-GHz GBW Distributed Amplifier in a SOI 0.12 μm CMOS Technology," ISSCC, Tech. Dig. Papers, pp. 478-479 February 2004.
    • (2004) ISSCC, Tech. Dig. Papers , pp. 478-479
    • Kim, J.1    Plouchart, J.O.2    Zamdmer, N.3
  • 17
    • 0041589314 scopus 로고    scopus 로고
    • A 0.6-22-GHz broadband CMOS distributed amplifier
    • June
    • R. Liu, et al., "A 0.6-22-GHz Broadband CMOS Distributed Amplifier," RFIC Sym. Dig. Papers, pp. 103-106, June 2003.
    • (2003) RFIC Sym. Dig. Papers , pp. 103-106
    • Liu, R.1
  • 18
    • 0041779675 scopus 로고    scopus 로고
    • An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems
    • Sep.
    • S. Masuda, et al., "An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems", J. Solid-State Circuits, vol. 38, no. 9, pp. 1479-1484, Sep. 2003.
    • (2003) J. Solid-state Circuits , vol.38 , Issue.9 , pp. 1479-1484
    • Masuda, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.