-
1
-
-
14844298187
-
RF CMOS comes of age
-
April
-
A. A. Abidi, "RF CMOS Comes of Age," J. Solid-Stale Circuits. Vol. 39, No. 4, pp 549-561, April 2004.
-
(2004)
J. Solid-stale Circuits
, vol.39
, Issue.4
, pp. 549-561
-
-
Abidi, A.A.1
-
2
-
-
30944461815
-
-
2004 ITRS roadmap update, http://www.itrs.net/Common/2004Update/2004 04 Wireless.pdf
-
2004 ITRS Roadmap Update
-
-
-
3
-
-
0035054939
-
A 50 GHz VCO in 0.25 um CMOS
-
5-7 Feb.
-
H. Wang, "A 50 GHz VCO in 0.25 um CMOS," ISSCC. 2001, 5-7 Feb. 2001, pp. 372-373
-
(2001)
ISSCC. 2001
, pp. 372-373
-
-
Wang, H.1
-
4
-
-
14544269856
-
Millimeter-wave CMOS circuit design
-
Feb.
-
H. Shigematsu, T. Hirose, F. Brewer, M. Rodwell, "Millimeter-wave CMOS circuit design," Microwave Theory and Techniques, IEEE Transactions on Volume 53, Issue 2, Feb. 2005, pp. 472-477
-
(2005)
Microwave Theory and Techniques, IEEE Transactions on
, vol.53
, Issue.2
, pp. 472-477
-
-
Shigematsu, H.1
Hirose, T.2
Brewer, F.3
Rodwell, M.4
-
5
-
-
11944267773
-
Millimeter-wave CMOS design
-
Jan.
-
C.H. Doan, S. Emami, A.M. Niknejad, R.W. Brodersen, "Millimeter-wave CMOS design," Solid-State Circuits, IEEE Journal of Volume 40, Issue 1, Jan. 2005 Page(s): 144-155
-
(2005)
Solid-state Circuits, IEEE Journal of
, vol.40
, Issue.1
, pp. 144-155
-
-
Doan, C.H.1
Emami, S.2
Niknejad, A.M.3
Brodersen, R.W.4
-
6
-
-
0041947475
-
Suitability of scaled SOI for high-frequency analog circuits
-
September
-
N. Zamdmer, JO. Plouchart, J. Kim, et al. "Suitability of Scaled SOI for High-Frequency Analog Circuits," ESSDERC, September 2002.
-
(2002)
ESSDERC
-
-
Zamdmer, N.1
Plouchart, J.O.2
Kim, J.3
-
7
-
-
0043162165
-
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
-
June
-
J. Kim, JO. Plouchart, et al., "High-Performance Three-Dimensional On-chip Inductors in SOI CMOS Technology for Monolithic RF Circuit Applications," RFIC Sym. Dig. Papers, pp 591-594, June 2003.
-
(2003)
RFIC Sym. Dig. Papers
, pp. 591-594
-
-
Kim, J.1
Plouchart, J.O.2
-
8
-
-
23944446418
-
max, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
-
July
-
max, 90-nm SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability," IEEE Transactions on Electron Devices. Vol. 52, Issue 7, July 2005, pp. 1370-1375.
-
(2005)
IEEE Transactions on Electron Devices
, vol.52
, Issue.7
, pp. 1370-1375
-
-
Plouchart, J.O.1
-
9
-
-
0346305079
-
Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics
-
Nov.
-
R. Tsai, M. Barsky, J. B. Boos, B. R. Bennett, J. Lee, N. A. Papanicolaou, R. Magno, C. Nambal, P. H. Liu, D. Park, R. Grundbacher, and A. Gutierrez, "Metamorphic AlSb/InAs HEMT for Low-Power, High-Speed Electronics," IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, pp. 294-297, Nov. 2003.
-
(2003)
IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium
, pp. 294-297
-
-
Tsai, R.1
Barsky, M.2
Boos, J.B.3
Bennett, B.R.4
Lee, J.5
Papanicolaou, N.A.6
Magno, R.7
Nambal, C.8
Liu, P.H.9
Park, D.10
Grundbacher, R.11
Gutierrez, A.12
-
10
-
-
0141538352
-
Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz fT, 80 GHz fMAX RF CMOS, high-Q MiM capacitor and spiral Cu inductor
-
June
-
J. C. Guo, W.Y. Lien, M.C. Hung, C.C. Liu, C.W. Chen, C.M. Wu, Y.C. Sun, and P. Yang, "Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz fT, 80 GHz fMAX RF CMOS, high-Q MiM capacitor and spiral Cu inductor," IEEE Symposium on VLSI Technology, pp. 39-40, June 2003.
-
(2003)
IEEE Symposium on VLSI Technology
, pp. 39-40
-
-
Guo, J.C.1
Lien, W.Y.2
Hung, M.C.3
Liu, C.C.4
Chen, C.W.5
Wu, C.M.6
Sun, Y.C.7
Yang, P.8
-
11
-
-
30944435655
-
-
Agilent product ATF-36077
-
Agilent product ATF-36077
-
-
-
-
12
-
-
0141761455
-
3-Dimensional vertical parallel plate capacitors in an SOI CMOS technology for integrated RF circuits
-
June
-
J. Kim, JO. Plouchart, et al., "3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits," VLSI Circuit Sym. Dig. Papers, pp 29-32, June 2003.
-
(2003)
VLSI Circuit Sym. Dig. Papers
, pp. 29-32
-
-
Kim, J.1
Plouchart, J.O.2
-
13
-
-
28144442261
-
A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12μm SOI CMOS
-
February
-
J. Kim, JO. Plouchart, et al. "A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12μm SOI CMOS," ISSCC, Tech. Dig. Papers, pp. 416-418, February 2005.
-
(2005)
ISSCC, Tech. Dig. Papers
, pp. 416-418
-
-
Kim, J.1
Plouchart, J.O.2
-
14
-
-
21644474327
-
SiGe HBT technology with fmax/fT = 350/300 GHz and gate delay below 3.3 ps
-
M. Khater, et. al., "SiGe HBT Technology with fmax/fT = 350/300 GHz and Gate Delay Below 3.3 ps," IEEE IEDM, 2004, pp. 247-250.
-
(2004)
IEEE IEDM
, pp. 247-250
-
-
Khater, M.1
-
15
-
-
0142020830
-
3.21 ps ECL gate using InP/lnGaAs DHBT technology
-
Oct.
-
K. Ishii, et. al., "3.21 ps ECL gate using InP/lnGaAs DHBT technology," Electroni. Lett., Vol. 39, pp. 1434-1436, Oct. 2003.
-
(2003)
Electroni. Lett.
, vol.39
, pp. 1434-1436
-
-
Ishii, K.1
-
16
-
-
2442680724
-
A 12-dBm 320-GHz GBW distributed amplifier in a SOI 0.12 μm CMOS technology
-
February
-
J. Kim, JO. Plouchart, N. Zamdmer, et al. "A 12-dBm 320-GHz GBW Distributed Amplifier in a SOI 0.12 μm CMOS Technology," ISSCC, Tech. Dig. Papers, pp. 478-479 February 2004.
-
(2004)
ISSCC, Tech. Dig. Papers
, pp. 478-479
-
-
Kim, J.1
Plouchart, J.O.2
Zamdmer, N.3
-
17
-
-
0041589314
-
A 0.6-22-GHz broadband CMOS distributed amplifier
-
June
-
R. Liu, et al., "A 0.6-22-GHz Broadband CMOS Distributed Amplifier," RFIC Sym. Dig. Papers, pp. 103-106, June 2003.
-
(2003)
RFIC Sym. Dig. Papers
, pp. 103-106
-
-
Liu, R.1
-
18
-
-
0041779675
-
An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems
-
Sep.
-
S. Masuda, et al., "An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems", J. Solid-State Circuits, vol. 38, no. 9, pp. 1479-1484, Sep. 2003.
-
(2003)
J. Solid-state Circuits
, vol.38
, Issue.9
, pp. 1479-1484
-
-
Masuda, S.1
|