Hybrid green LEDs based on n-ZnO/(InGaN/GaN)multi-quantum-wells/p-GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7217, Issue , 2009, Pages

  Bayram, C ^a   Teherani, F Hosseini ^b   Rogers, D J ^b   Razeghi, M ^a  

^a Northwestern University   (United States)

^b 8 Route de Chevreuse France   (France)

Author keywords

Green light emitting diode; InGaN GaN multi quantum wells; Metalorganic chemical vapor deposition; Pulsed laser deposition; ZnO

Indexed keywords

BAND GAP RENORMALIZATION; BLUE SHIFT; CRYSTALLOGRAPHIC QUALITY; GREEN LEDS; GREEN LIGHT; GREEN LIGHT-EMITTING DIODE; INGAN/GAN; INGAN/GAN MULTI-QUANTUM WELLS; LED STRUCTURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; ROOM TEMPERATURE; SEMI-INSULATING; TURN ON VOLTAGE; ZNO;

CURRENT DENSITY; DEPOSITION; DIODES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LIGHT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; PULSED LASER DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; VAPORS; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 67649221026     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.817033     Document Type: Conference Paper

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