Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers

Microelectronics Reliability

Volumn 48, Issue 5, 2008, Pages 794-797

  Lau, W S ^a   Wong, W T ^a   Tan, Joy B H ^a   Singh, B P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE EFFECTS; OHMIC CONTACTS; RAPID THERMAL ANNEALING;

EPITAXIAL WAFERS; OHMIC CONTACT ANNEALING;

WATER VAPOR;

EID: 43049175147     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.01.006     Document Type: Article

References (12)

1. Shah D.M., Chan W.K., Caneau C., Gmitter T.J., Hong B., and De Rosa F. IEEE Trans Electron Dev 42 (1995) 1877
2. Tan C.L., Wang H., and Radhakrishnan K. Appl Phys Lett 90 (2007) 033501
3. Klepser B.-U.H., Bergamaschi C., and Patrick W. Solid-State Electron 37 (1994) 1905
4. Kim S.J., et al. J Korean Phys Soc (2003) 275
5. Chaturvedi N., Zeimer U., Würfl J., and Tränkle G. Semicond Sci Technol 21 (2006) 175
6. Jacobs B., Kramer M.C.J.C.M., Geluk E.J., and Karouta F. J Cryst Growth 241 (2002) 15
7. Bardwell J.A., et al. J Vac Sci Technol 20 (2002) 1444
8. Ueda N., Hosono H., Waseda R., and Kawazoe H. Appl Phys Lett 70 (1997) 3561
9. Oritz A., Alonso J.C., Andrade E., and Urbiola C. J Electrochem Soc 148 (2001) F26
10. Kim S.K., Lee S.W., Hwang C.S., Min Y.-S., Won J.Y., and Jeong J. J Electrochem Soc 153 (2006) F69
11. No S.Y., Eom D., Hwang C.S., and Kim H.J. J Electrochem Soc 153 (2006) F87
12. Binet L., and Gourier D. Appl Phys Lett 77 (2000) 1138