Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1161-1166

  Estrada, M ^a   Cerdeira, A ^a   Resendiz, L ^a   Iniguez B ^b   Marzal, L F ^b   Pallares, J ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Amorphous and nanocrystalline silicon; Density of states distribution; TFT

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; HYDROGENATION; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; POLYSILICON; TRANSCONDUCTANCE;

AMORPHOUS AND NANOCRYSTALLINE SILICON; DENSITY OF STATES DISTRIBUTION; MICROCRYSTALLINE DEVICES; NANOCRYSTALLINE DEVICES;

THIN FILM TRANSISTORS;

EID: 20344387816     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.12.005     Document Type: Article

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