High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350 °C

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2268-2271

  Han, Sang Myeon ^a   Kim, Sun Jae ^a   Park, Joong Hyun ^a   Choi, Sung Hwan ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Chemical vapor deposition; Crystal growth; Thin film transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPOSITION; INDUCTIVELY COUPLED PLASMA; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS;

INCUBATION LAYER; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION (ICP-CVD); NANOCRYSTALLINE SILICON THIN FILMS;

NANOCRYSTALLINE SILICON;

EID: 42749088932     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.082     Document Type: Article

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