Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD

Diamond and Related Materials

Volumn 14, Issue 11-12, 2005, Pages 1743-1746

  Mokuno, Y ^a   Chayahara, A ^a   Soda, Y ^a   Horino, Y ^a   Fujimori, N ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

High rate growth; Homoepitaxial growth; Microwave plasma CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; EPITAXIAL GROWTH; MICROWAVES; MORPHOLOGY; SUBSTRATES;

HIGH RATE GROWTH; HOMOEPITAXIAL GROWTH; MICROWAVE PLASMA CVD;

SINGLE CRYSTALS;

EID: 27744548969     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.09.020     Document Type: Conference Paper

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