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Volumn 204, Issue 9, 2007, Pages 3059-3064

Electrical and optical properties of multivacancy centres in diamond

Author keywords

[No Author keywords available]

Indexed keywords

BROAD ABSORPTION CONTINUUM; THRESHOLD ABSORPTION ENERGY; VACANCY-NITROGEN DEFECTS;

EID: 34548766608     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200776311     Document Type: Conference Paper
Times cited : (20)

References (16)
  • 7
    • 34548715592 scopus 로고    scopus 로고
    • A. Collins, J. Gemm. 18, 37 (1982).
    • A. Collins, J. Gemm. 18, 37 (1982).
  • 9
    • 0034465110 scopus 로고    scopus 로고
    • R. Jones et al., The interaction of hydrogen with deep level defects in silicon, in: Special defects in semiconducting materials, 71, Solid State Phenomena, edited by R. P. Agarwala (Scitech Publications Ltd., Zuerich-Uetikon, Switzerland, 2000), pp. 173-248.
    • R. Jones et al., The interaction of hydrogen with deep level defects in silicon, in: Special defects in semiconducting materials, Vol. 71, Solid State Phenomena, edited by R. P. Agarwala (Scitech Publications Ltd., Zuerich-Uetikon, Switzerland, 2000), pp. 173-248.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.