High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1774-1776

  Vallee C ^a   Gonon, P ^a   Jorel, C ^a   El Kamel, F ^b   Mougenot, M ^a   Jousseaume, V ^c  

^a Université Joseph Fourier   (France)

^b LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

^c CEA LETI   (France)

Author keywords

High ; MIM; RRAM

Indexed keywords

BOTTOM ELECTRODES; CAPACITANCE VARIATION; CAPACITANCE-VOLTAGE CURVE; ELECTRODE COMPOSITION; HIGH WORK FUNCTION; LOW OXYGEN; METALLIC ELECTRODES; MIM; MIM CAPACITORS; NON-LINEARITY; RRAM; SWITCHING MECHANISM;

CAPACITANCE; CAPACITORS; ELECTRODES; ELECTROLYTIC CAPACITORS; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; PLATINUM; TITANIUM NITRIDE;

MIM DEVICES;

EID: 67349240351     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.001     Document Type: Article

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