High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1774-1776

  Vallee C ^a   Gonon, P ^a   Jorel, C ^a   El Kamel, F ^b   Mougenot, M ^a   Jousseaume, V ^c  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

^c CEA LETI   (France)

Author keywords

High ; MIM; RRAM

Indexed keywords

BOTTOM ELECTRODES; CAPACITANCE VARIATION; CAPACITANCE-VOLTAGE CURVE; ELECTRODE COMPOSITION; HIGH WORK FUNCTION; LOW OXYGEN; METALLIC ELECTRODES; MIM; MIM CAPACITORS; NON-LINEARITY; RRAM; SWITCHING MECHANISM;

CAPACITANCE; CAPACITORS; ELECTRODES; ELECTROLYTIC CAPACITORS; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; PLATINUM; TITANIUM NITRIDE;

MIM DEVICES;

EID: 67349240351     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.001     Document Type: Article

References (17)

1. Shiraishi K., Yamada K., Torii K., Akasaka Y., Nakajima K., Konno M., Chikyow T., Kitajima H., and Arikado T. Jpn. J. Appl. Phys. Part 2 43 (2004) L1413
2. Guha S., and Solomon P. Appl. Phys. Lett. 92 (2008) 012909
3. Tse K., Liu D., Xiong K., and Robertson J. Microelectron. Eng. 84 (2007) 2028
4. Gonon P., and Vallée C. Appl. Phys. Lett. 90 (2007) 142906
5. Kang T.-K., Chang C.-T., Lin C.-L., and Wu W.-F. Microelectron. Eng. (2009) 10.1016/j.mee.2009.01.015
6. El Kamel F., Gonon P., and Vallée C. Appl. Phys. Lett. 91 (2007) 172909
7. Jorel C., Vallée C., Gourvest E., Pelissier B., Kahn M., Bonvalot M., and Gonon P. J. Vac. Sci. Technol. B 27 (2009) 378
8. Wenger Ch., Lukosius M., Weidner G., Müssig H.-J., Pasko S., and Lohe Ch. Thin Solid Films (2009) 10.1016/j.tsf.2009.02.074
9. Yang J.J., Pickett M.D., Li X., Ohlberg D.A.A., Stewart D.R., and Williams R.S. Nat. Nanotechnol. 3 (2008) 429
10. Gonon P., and El Kamel F. Appl. Phys. Lett. 90 (2007) 232902
11. Durand C., Vallée C., Loup V., Salicio O., Dubourdieu C., Blonkowski S., Bonvalot M., Holliger P., and Joubert O. J. Vac. Sci. Technol. A 22 (2004) 655
12. Durand C., Dubourdieu C., Vallée C., Loup V., Bonvalot M., Joubert O., Roussel H., and Renault O. J. Appl. Phys. 96 (2004) 1719
13. Kim S.J., Cho B.J., Li M.F., Ding S.-J., Zhu C., Yu M.B., Narayanan B., Chin A., and Kwong D.-L. IEEE Electron. Dev. Lett. 25 8 (2004) 538-540
14. Robertson J., Sharia O., and Demkov A.A. Appl. Phys. Lett. 91 (2007) 132912
15. Lee H.-S., Bain J.A., Choi S., and Salvador P.A. Appl. Phys. Lett. 90 (2007) 202107
16. Wu S.X., Xing X.J., Chen S.M., Yuan Y.B., Liu Y.J., Yu Y.P., Li X.Y., and Li S.W. Appl. Phys. Lett. 93 (2008) 043502
17. Lee H.-Y., Chen P.-S., Wang C.-C., Maikap S., Tzeng P.-J., Lin C.-H., Lee L.-S., and Tsai M.-J. Jpn. J. Appl. Phys. 46 4B (2007) 2175