Microstructure and properties of annealed IrO2 thin films prepared by pulsed laser deposition

Materials Chemistry and Physics

Volumn 116, Issue 2-3, 2009, Pages 573-577

  Gong, Yansheng ^a,b   Wang, Chuanbin ^c   Shen, Qiang ^c   Zhang, Lianmeng ^c  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b Guangxi Key Laboratory for the Advance Materials and New Preparation Technology   (China)

^c WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing; Electrical resistivity; IrO2 thin films; Pulsed laser deposition

Indexed keywords

AIR AMBIENT; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FOUR-POINT PROBE METHOD; IRIDIUM OXIDES; IRO2 THIN FILMS; MICROSTRUCTURE AND PROPERTIES; QUARTZ GLASS SUBSTRATES; ROOM TEMPERATURE; SI(1 0 0); VISIBLE RANGE; VISIBLE SPECTROMETERS;

ANNEALING; ELECTRIC RESISTANCE; FIELD EMISSION; FIELD EMISSION MICROSCOPES; IRIDIUM; IRIDIUM COMPOUNDS; LASERS; MORPHOLOGY; OPTICAL PROPERTIES; OXIDE MINERALS; PULSED LASER DEPOSITION; QUARTZ; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 67349240130     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.04.039     Document Type: Article

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