Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Zinchuk, O ^a   Saad, A ^b   Drozdov, N ^a   Fedotov, A ^a   Kobeleva, S ^c   Mazanik, A ^a   Patryn, A ^d   Pilipenko, V ^e   Pushkarchuk, A ^f  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b AL BALQA APPLIED UNIVERSITY   (Jordan)

^c NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^d KOSZALIN UNIVERSITY OF TECHNOLOGY   (Poland)

^e STC Belmicrosystems   (Belarus)

^f INSTITUTE OF PHYSICAL ORGANIC CHEMISTRY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI; HYDROGEN IONS; I-V AND C-V CHARACTERISTICS; INSULATING PROPERTIES; LOW TEMPERATURES; NANO LAYERS; SILICON WAFER SURFACE;

HYDROGEN; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE TREATMENT;

SILICON WAFERS;

EID: 53649084974     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9704-3     Document Type: Article

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