Influence of low-temperature Argon ion-beam treatment on the photovoltage spectra of standard Cz Si wafers

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 333-338

  Saad, A M ^a   Zinchuk, O V ^b   Drozdov, N A ^b   Fedotov, A K ^b   Mazanik, A V ^b  

^a AL BALQA APPLIED UNIVERSITY   (Jordan)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Argon; Hydrogen; Ion beam treatment; Photovoltage spectra; Silicon

Indexed keywords

ARGON; DIELECTRIC MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; LOW TEMPERATURE EFFECTS; PHOTOSENSITIVITY; HYDROGEN; IONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON WAFERS; TEMPERATURE;

DIELECTRIC LAYERS; ION-BEAM TREATMENT; PHOTOVOLTAGE SPECTRA; DIELECTRIC LAYER; ION BEAM TREATMENT; LOW TEMPERATURES; NEAR SURFACE REGIONS; NEAR-SURFACE LAYERS; SPECTRAL REGION; ULTRAVIOLET SPECTRAL REGIONS;

SILICON WAFERS; ION BEAMS;

EID: 38549151167     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (2)

1. N. Drozdov, O. Zinchuk, S. Kobeleva, Yu. Kovalev, A. Mazanik, S. Tiutiunnikov, A Fedotov, S. Chigir, in: Low-dimensional systems-2, edited by S.A. Maskevich, volume 4, Grodno. Belarus, 2005. p. 148.
2. O. Zinchuk, N. Drozdov, A. Mazanik, A. Fedotov, P. Żukowski, J. Partyka, P. Wȩgierek, T. Koltunowicz: Vacuum Vol. 81 (2007), p. 1332.