SCOPUS 정보 검색 플랫폼

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9154-9158

MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications

(8) Lemberger, M a Thiemann, S a Baunemann, A b Parala, H b Fischer, R A b Hinz, J c Bauer, A J c Ryssel, H a,c

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b RUHR UNIVERSITY BOCHUM (Germany)

c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

MOS capacitor; Organometallic CVD; Photoelectron spectroscopy; Resistivity; Tantalum Nitride

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DEPOSITION RATES; ELECTRIC CONDUCTIVITY; ELECTRIC REACTORS; ELECTRODES; FILM GROWTH; LEAKAGE CURRENTS; TANTALUM COMPOUNDS; THIN FILM CIRCUITS; WORK FUNCTION;

METAL WORK FUNCTION; TANTALUM NITRIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DEPOSITION RATES; ELECTRIC CONDUCTIVITY; ELECTRIC REACTORS; ELECTRODES; FILM GROWTH; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS; THIN FILM CIRCUITS; WORK FUNCTION;

EID: 34547691579 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2007.04.074 Document Type: Article

Times cited : (13)

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